M. I. Hussain, D. Heinrich, M. Guevara-Bertsch, E. Torrontegui, J. J. Garcia-Ripoll, C. F. Roos, R. Blatt Ultraviolet Laser Pulses with Multigigahertz Repetition Rate and Multiwatt Average Power for Fast Trapped-Ion Entanglement Operations,
Phys. Rev. Applied 15 24054 (2021-02-23),
http://dx.doi.org/10.1103/PhysRevApplied.15.024054 doi:10.1103/PhysRevApplied.15.024054 (ID: 720517)
The conventional approach to perform two-qubit gate operations in trapped ions relies on exciting the ions on motional sidebands with laser light, which is an inherently slow process. One way to implement a fast entangling gate protocol requires a suitable pulsed laser to increase the gate speed by orders of magnitude. However, the realization of such a fast entangling gate operation presents a big technical challenge, as such the required laser source is not available off-the-shelf. For this, we have engineered an ultrafast entangling gate source based on a frequency comb. The laser generates bursts of several hundred mode-locked pulses with pulse energy ∼800 pJ at 5 GHz repetition rate at 393.3 nm and complies with all requirements for implementing a fast two-qubit gate operation. To verify the applicability and projected performance we run simulations based on our source parameters. The gate time can be faster than a trap period with an error approaching 10^(−4).